Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires

The thermal conductivity of silicon/germanium nanowires with different geometry and composition has beenstudied by using the nonequilibrium molecular dynamics method. The thermal conductivity of the Si1-xGexnanowire is shown to firstly decrease, reaches a minimum at x=0.4 and then to increase, as th...

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Main Authors:	Andriy Kishkar, Vasyl Kurylyuk
Format:	Article
Language:	English
Published:	Vasyl Stefanyk Precarpathian National University 2018-10-01
Series:	Фізика і хімія твердого тіла
Online Access:	http://journals.pu.if.ua/index.php/pcss/article/view/3045

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spelling	doaj-b05846fd044148e0b0b1cf716e5187da2020-11-25T01:58:33ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892018-10-0119322222510.15330/pcss.19.3.222-2252769Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium NanowiresAndriy Kishkar0Vasyl Kurylyuk1Київський національний університет імені Тараса ШевченкаКиївський національний університет імені Тараса ШевченкаThe thermal conductivity of silicon/germanium nanowires with different geometry and composition has beenstudied by using the nonequilibrium molecular dynamics method. The thermal conductivity of the Si1-xGexnanowire is shown to firstly decrease, reaches a minimum at x=0.4 and then to increase, as the germaniumcontent x grows. It was found that in the tubular Si nanowires the thermal conductivity decreases monotonouslywith increasing radius of the cylindrical void. The phonon spectra were calculated and the mechanisms of phononscattering in the investigated nanowires were analyzed.<br /><strong>Keywords</strong>: thermal conductivity, nanowire, silicon, germanium, molecular dynamics.http://journals.pu.if.ua/index.php/pcss/article/view/3045
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Andriy Kishkar Vasyl Kurylyuk
spellingShingle	Andriy Kishkar Vasyl Kurylyuk Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires Фізика і хімія твердого тіла
author_facet	Andriy Kishkar Vasyl Kurylyuk
author_sort	Andriy Kishkar
title	Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires
title_short	Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires
title_full	Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires
title_fullStr	Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires
title_full_unstemmed	Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires
title_sort	molecular dynamics modeling of thermal conductivity of silicon/germanium nanowires
publisher	Vasyl Stefanyk Precarpathian National University
series	Фізика і хімія твердого тіла
issn	1729-4428 2309-8589
publishDate	2018-10-01
description	The thermal conductivity of silicon/germanium nanowires with different geometry and composition has beenstudied by using the nonequilibrium molecular dynamics method. The thermal conductivity of the Si1-xGexnanowire is shown to firstly decrease, reaches a minimum at x=0.4 and then to increase, as the germaniumcontent x grows. It was found that in the tubular Si nanowires the thermal conductivity decreases monotonouslywith increasing radius of the cylindrical void. The phonon spectra were calculated and the mechanisms of phononscattering in the investigated nanowires were analyzed.<br /><strong>Keywords</strong>: thermal conductivity, nanowire, silicon, germanium, molecular dynamics.
url	http://journals.pu.if.ua/index.php/pcss/article/view/3045
work_keys_str_mv	AT andriykishkar moleculardynamicsmodelingofthermalconductivityofsilicongermaniumnanowires AT vasylkurylyuk moleculardynamicsmodelingofthermalconductivityofsilicongermaniumnanowires
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Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires

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