Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

• Main Authors: Tommaso Jacopo Giammaria, Ahmed Gharbi, Anne Paquet, Paul Nealey, Raluca Tiron
• Format: Article
• Language: English
• Published: MDPI AG 2020-12-01
• Series: Nanomaterials
• Subjects: directed self-assembly (DSA); block copolymers (BCPs); chemo-epitaxy; polystyrene-block-polymethylmethacrylate (PS-<i>b</i>-PMMA); line/space patterning; line edge roughness (LER)
• Online Access: https://www.mdpi.com/2079-4991/10/12/2443

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-<i>b</i>-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-<i>r</i>-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.