Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

• Main Authors: Zhongliang Qiao, Xiang Li, Jia Xubrian Sia, Wanjun Wang, Hong Wang, Lin Li, Zaijin Li, Zhibin Zhao, Yi Qu, Xin Gao, Baoxue Bo, Chongyang Liu
• Format: Article
• Language: English
• Published: IEEE 2021-01-01
• Series: IEEE Access
• Subjects: Semiconductor lasers; quantum well lasers; quantum wells; laser modes
• Online Access: https://ieeexplore.ieee.org/document/9320484/
• ISSN: 2169-3536

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 μm is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (T₀) of the laser and the influences of absorber bias voltage on T₀ have been systematically investigated. From our findings, T₀ shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.