Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures

Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures

In this work, we carried out the study of CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) gas chemistries in respect to the SiO<sub>x</sub>N<sub>y</sub>...

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Bibliographic Details
Main Authors: Yunho Nam, Alexander Efremov, Byung Jun Lee, Kwang-Ho Kwon
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Materials
Subjects:
global warming potential
SiO<sub>x</sub>N<sub>y</sub> etching rate
plasma diagnostics
reaction kinetics
polymerization
Online Access:https://www.mdpi.com/1996-1944/13/23/5476

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