Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures

Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures

In this work, we carried out the study of CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) gas chemistries in respect to the SiO<sub>x</sub>N<sub>y</sub>...

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Main Authors: Yunho Nam, Alexander Efremov, Byung Jun Lee, Kwang-Ho Kwon
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Materials
Subjects:
global warming potential
SiO<sub>x</sub>N<sub>y</sub> etching rate
plasma diagnostics
reaction kinetics
polymerization
Online Access:https://www.mdpi.com/1996-1944/13/23/5476
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spelling doaj-b00c2bd12cec46118747d534f1820e172020-12-02T00:02:21ZengMDPI AGMaterials1996-19442020-12-01135476547610.3390/ma13235476Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas MixturesYunho Nam0Alexander Efremov1Byung Jun Lee2Kwang-Ho Kwon3Department of Control and Instrumentation Engineering, Korea University, Sejong 30019, KoreaDepartment of Electronic Devices & Materials Technology, State University of Chemistry & Technology, 7 Sheremetevsky av, 153000 Ivanovo, RussiaDepartment of Control and Instrumentation Engineering, Korea University, Sejong 30019, KoreaDepartment of Control and Instrumentation Engineering, Korea University, Sejong 30019, KoreaIn this work, we carried out the study of CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) gas chemistries in respect to the SiO<sub>x</sub>N<sub>y</sub> reactive-ion etching process in a low power regime. The interest in the liquid CF<sub>2</sub>Br<sub>2</sub> as an additive component is motivated by its generally unknown plasma etching performance. The combination of various diagnostic tools (double Langmuir probe, quadrupole mass-spectrometry, X-ray photoelectron spectroscopy) allowed us to compare the effects of CF<sub>4</sub>/X mixing ratio, input power and gas pressure on gas-phase plasma characteristics as well as to analyze the SiO<sub>x</sub>N<sub>y</sub> etching kinetics in terms of process-condition-dependent effective reaction probability. It was found that the given gas systems are characterized by: (1) similar changes in plasma parameters (electron temperature, ion current density) and fluxes of active species with variations in processing conditions; (2) identical behaviors of SiO<sub>x</sub>N<sub>y</sub> etching rates, as determined by the neutral-flux-limited process regime; and (3) non-constant SiO<sub>x</sub>N<sub>y</sub> + F reaction probabilities due to changes in the polymer deposition/removal balance. The features of CF<sub>4</sub> + CF<sub>2</sub>Br<sub>2</sub> + O<sub>2</sub> plasma are lower polymerization ability (due to the lower flux of CF<sub>x</sub> radicals) and a bit more vertical etching profile (due to the lower neutral/charged ratio).https://www.mdpi.com/1996-1944/13/23/5476global warming potentialSiO<sub>x</sub>N<sub>y</sub> etching rateplasma diagnosticsreaction kineticspolymerization
collection DOAJ
language English
format Article
sources DOAJ
author Yunho Nam
Alexander Efremov
Byung Jun Lee
Kwang-Ho Kwon
spellingShingle Yunho Nam
Alexander Efremov
Byung Jun Lee
Kwang-Ho Kwon
Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures
Materials
global warming potential
SiO<sub>x</sub>N<sub>y</sub> etching rate
plasma diagnostics
reaction kinetics
polymerization
author_facet Yunho Nam
Alexander Efremov
Byung Jun Lee
Kwang-Ho Kwon
author_sort Yunho Nam
title Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures
title_short Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures
title_full Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures
title_fullStr Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures
title_full_unstemmed Plasma Parameters and Etching Characteristics of SiO<sub>x</sub>N<sub>y</sub> Films in CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) Gas Mixtures
title_sort plasma parameters and etching characteristics of sio<sub>x</sub>n<sub>y</sub> films in cf<sub>4</sub> + o<sub>2</sub> + x (x = c<sub>4</sub>f<sub>8</sub> or cf<sub>2</sub>br<sub>2</sub>) gas mixtures
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2020-12-01
description In this work, we carried out the study of CF<sub>4</sub> + O<sub>2</sub> + X (X = C<sub>4</sub>F<sub>8</sub> or CF<sub>2</sub>Br<sub>2</sub>) gas chemistries in respect to the SiO<sub>x</sub>N<sub>y</sub> reactive-ion etching process in a low power regime. The interest in the liquid CF<sub>2</sub>Br<sub>2</sub> as an additive component is motivated by its generally unknown plasma etching performance. The combination of various diagnostic tools (double Langmuir probe, quadrupole mass-spectrometry, X-ray photoelectron spectroscopy) allowed us to compare the effects of CF<sub>4</sub>/X mixing ratio, input power and gas pressure on gas-phase plasma characteristics as well as to analyze the SiO<sub>x</sub>N<sub>y</sub> etching kinetics in terms of process-condition-dependent effective reaction probability. It was found that the given gas systems are characterized by: (1) similar changes in plasma parameters (electron temperature, ion current density) and fluxes of active species with variations in processing conditions; (2) identical behaviors of SiO<sub>x</sub>N<sub>y</sub> etching rates, as determined by the neutral-flux-limited process regime; and (3) non-constant SiO<sub>x</sub>N<sub>y</sub> + F reaction probabilities due to changes in the polymer deposition/removal balance. The features of CF<sub>4</sub> + CF<sub>2</sub>Br<sub>2</sub> + O<sub>2</sub> plasma are lower polymerization ability (due to the lower flux of CF<sub>x</sub> radicals) and a bit more vertical etching profile (due to the lower neutral/charged ratio).
topic global warming potential
SiO<sub>x</sub>N<sub>y</sub> etching rate
plasma diagnostics
reaction kinetics
polymerization
url https://www.mdpi.com/1996-1944/13/23/5476
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AT byungjunlee plasmaparametersandetchingcharacteristicsofsiosubxsubnsubysubfilmsincfsub4subosub2subxxcsub4subfsub8suborcfsub2subbrsub2subgasmixtures
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