Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a M...

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Main Authors: Hiroyuki Oguchi, Shigehito Isobe, Hiroki Kuwano, Susumu Shiraki, Shin-ichi Orimo, Taro Hitosugi
Format: Article
Language:English
Published: AIP Publishing LLC 2015-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4931080
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spelling doaj-af8b6c70f25447bca43693d50d9e21852020-11-25T00:23:29ZengAIP Publishing LLCAPL Materials2166-532X2015-09-0139096106096106-610.1063/1.4931080004509APMPulsed laser deposition of air-sensitive hydride epitaxial thin films: LiHHiroyuki Oguchi0Shigehito Isobe1Hiroki Kuwano2Susumu Shiraki3Shin-ichi Orimo4Taro Hitosugi5Department of Nanomechanics, Tohoku University, Sendai 980-8579, JapanCreative Research Institution, Hokkaido University, Sapporo 001-0021, JapanDepartment of Nanomechanics, Tohoku University, Sendai 980-8579, JapanAdvanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, JapanAdvanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, JapanAdvanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, JapanWe report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10−2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.http://dx.doi.org/10.1063/1.4931080
collection DOAJ
language English
format Article
sources DOAJ
author Hiroyuki Oguchi
Shigehito Isobe
Hiroki Kuwano
Susumu Shiraki
Shin-ichi Orimo
Taro Hitosugi
spellingShingle Hiroyuki Oguchi
Shigehito Isobe
Hiroki Kuwano
Susumu Shiraki
Shin-ichi Orimo
Taro Hitosugi
Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
APL Materials
author_facet Hiroyuki Oguchi
Shigehito Isobe
Hiroki Kuwano
Susumu Shiraki
Shin-ichi Orimo
Taro Hitosugi
author_sort Hiroyuki Oguchi
title Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
title_short Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
title_full Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
title_fullStr Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
title_full_unstemmed Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH
title_sort pulsed laser deposition of air-sensitive hydride epitaxial thin films: lih
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2015-09-01
description We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10−2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.
url http://dx.doi.org/10.1063/1.4931080
work_keys_str_mv AT hiroyukioguchi pulsedlaserdepositionofairsensitivehydrideepitaxialthinfilmslih
AT shigehitoisobe pulsedlaserdepositionofairsensitivehydrideepitaxialthinfilmslih
AT hirokikuwano pulsedlaserdepositionofairsensitivehydrideepitaxialthinfilmslih
AT susumushiraki pulsedlaserdepositionofairsensitivehydrideepitaxialthinfilmslih
AT shinichiorimo pulsedlaserdepositionofairsensitivehydrideepitaxialthinfilmslih
AT tarohitosugi pulsedlaserdepositionofairsensitivehydrideepitaxialthinfilmslih
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