| Summary: | We have studied magnetotransport properties of a topological insulator material
Ru2Sn3. Bulk single crystals of Ru2Sn3 were
grown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, while
it becomes metallic below 160 K. Nonlinear field dependence of Hall resistivity in the metallic
region shows conduction of multiple carriers at low temperatures. In the high-temperature
semiconducting region, magnetoresistance exhibits a conventional quadratic magnetic-field
dependence. In the low-temperature metallic region, however, high-field magnetoresistance is clearly
linear with magnetic
fields, signaling a linear dispersion in the low-temperature electronic
structure. Small changes in the magnetoresistance magnitude with respect to the magnetic field angle indicate
that bulk electron carriers are responsible mainly for the observed linear magnetoresistance.
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