Electric control of exchange bias in Co/FeOx bilayer by resistive switching

Two types of electric control of exchange bias (EB) by resistive switching (RS), i.e. conductive-filament-RS (type I) and interface-barrier-RS (type II) were observed in the Si/SiO2Ti/Pt/FeOx/Co/ITO multilayer devices, which were fabricated by magnetron sputtering. It is difficult for the type I dev...

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Bibliographic Details
Main Authors: Lujun Wei, Jiangtao Qu, Rongkun Zheng, Ruobai Liu, Yuan Yuan, Ji Wang, Liang Sun, Biao You, Wei Zhang, Qingyu Xu, Jun Du
Format: Article
Language:English
Published: AIP Publishing LLC 2020-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5129506

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