Electric control of exchange bias in Co/FeOx bilayer by resistive switching
Two types of electric control of exchange bias (EB) by resistive switching (RS), i.e. conductive-filament-RS (type I) and interface-barrier-RS (type II) were observed in the Si/SiO2Ti/Pt/FeOx/Co/ITO multilayer devices, which were fabricated by magnetron sputtering. It is difficult for the type I dev...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5129506 |