Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, H...

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Bibliographic Details
Main Authors: Xiao-Ying Zhang, Chia-Hsun Hsu, Yun-Shao Cho, Shui-Yang Lien, Wen-Zhang Zhu, Song-Yan Chen, Wei Huang, Lin-Gui Xie, Lian-Dong Chen, Xu-Yang Zou, Si-Xin Huang
Format: Article
Language:English
Published: MDPI AG 2017-12-01
Series:Applied Sciences
Subjects:
hafnium oxide
atomic layer deposition
crystalline silicon solar cell
annealing
Online Access:https://www.mdpi.com/2076-3417/7/12/1244

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