Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, H...
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2017-12-01
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doaj-ae619f0811704fe482894baee11d8bcb2020-11-25T00:21:43ZengMDPI AGApplied Sciences2076-34172017-12-01712124410.3390/app7121244app7121244Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALDXiao-Ying Zhang0Chia-Hsun Hsu1Yun-Shao Cho2Shui-Yang Lien3Wen-Zhang Zhu4Song-Yan Chen5Wei Huang6Lin-Gui Xie7Lian-Dong Chen8Xu-Yang Zou9Si-Xin Huang10School of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, ChinaDepartment of Materials Science and Engineering, Da-Yeh University, ChungHua 51591, TaiwanDepartment of Materials Science and Engineering, Da-Yeh University, ChungHua 51591, TaiwanDepartment of Materials Science and Engineering, Da-Yeh University, ChungHua 51591, TaiwanSchool of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, ChinaDepartment of Physics, OSED, Xiamen University, Xiamen 361005, ChinaDepartment of Physics, OSED, Xiamen University, Xiamen 361005, ChinaSchool of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, ChinaRecombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, HfO2 films are deposited on n-type c-Si using remote plasma atomic layer deposition (RP-ALD). Post-annealing is performed using a rapid thermal processing system at different temperatures in nitrogen ambient for 10 min. The effects of post-annealing temperature on the passivation properties of the HfO2 films on c-Si are investigated. Personal computer one dimension numerical simulation for the passivated emitter and rear contact (PERC) solar cells with the HfO2 passivation layer is also presented. By means of modeling and numerical computer simulation, the influence of different front surface recombination velocity (SRV) and rear SRV on n-type silicon solar cell performance was investigated. Simulation results show that the n-type PERC solar cell with HfO2 single layer can have a conversion efficiency of 22.1%. The PERC using silicon nitride/HfO2 stacked passivation layer can further increase efficiency to 23.02% with an open-circuit voltage of 689 mV.https://www.mdpi.com/2076-3417/7/12/1244hafnium oxideatomic layer depositioncrystalline silicon solar cellannealing |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Xiao-Ying Zhang Chia-Hsun Hsu Yun-Shao Cho Shui-Yang Lien Wen-Zhang Zhu Song-Yan Chen Wei Huang Lin-Gui Xie Lian-Dong Chen Xu-Yang Zou Si-Xin Huang |
| spellingShingle |
Xiao-Ying Zhang Chia-Hsun Hsu Yun-Shao Cho Shui-Yang Lien Wen-Zhang Zhu Song-Yan Chen Wei Huang Lin-Gui Xie Lian-Dong Chen Xu-Yang Zou Si-Xin Huang Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD Applied Sciences hafnium oxide atomic layer deposition crystalline silicon solar cell annealing |
| author_facet |
Xiao-Ying Zhang Chia-Hsun Hsu Yun-Shao Cho Shui-Yang Lien Wen-Zhang Zhu Song-Yan Chen Wei Huang Lin-Gui Xie Lian-Dong Chen Xu-Yang Zou Si-Xin Huang |
| author_sort |
Xiao-Ying Zhang |
| title |
Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| title_short |
Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| title_full |
Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| title_fullStr |
Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| title_full_unstemmed |
Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| title_sort |
simulation and fabrication of hfo2 thin films passivating si from a numerical computer and remote plasma ald |
| publisher |
MDPI AG |
| series |
Applied Sciences |
| issn |
2076-3417 |
| publishDate |
2017-12-01 |
| description |
Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, HfO2 films are deposited on n-type c-Si using remote plasma atomic layer deposition (RP-ALD). Post-annealing is performed using a rapid thermal processing system at different temperatures in nitrogen ambient for 10 min. The effects of post-annealing temperature on the passivation properties of the HfO2 films on c-Si are investigated. Personal computer one dimension numerical simulation for the passivated emitter and rear contact (PERC) solar cells with the HfO2 passivation layer is also presented. By means of modeling and numerical computer simulation, the influence of different front surface recombination velocity (SRV) and rear SRV on n-type silicon solar cell performance was investigated. Simulation results show that the n-type PERC solar cell with HfO2 single layer can have a conversion efficiency of 22.1%. The PERC using silicon nitride/HfO2 stacked passivation layer can further increase efficiency to 23.02% with an open-circuit voltage of 689 mV. |
| topic |
hafnium oxide atomic layer deposition crystalline silicon solar cell annealing |
| url |
https://www.mdpi.com/2076-3417/7/12/1244 |
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