Homoepitaxial graphene tunnel barriers for spin transport
Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states tha...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4942555 |