Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical swi...

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Main Authors: Rituraj Sharma, Kiran Prasai, D. A. Drabold, K. V. Adarsh
Format: Article
Language:English
Published: AIP Publishing LLC 2015-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4927543
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spelling doaj-add4531ca4a048e199f5b67770dca68a2020-11-24T21:09:09ZengAIP Publishing LLCAIP Advances2158-32262015-07-0157077164077164-610.1063/1.4927543065507ADVUltrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin filmsRituraj Sharma0Kiran Prasai1D. A. Drabold2K. V. Adarsh3Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066, IndiaDepartment of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USADepartment of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USADepartment of Physics, Indian Institute of Science Education and Research, Bhopal 462066, IndiaOptical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.http://dx.doi.org/10.1063/1.4927543
collection DOAJ
language English
format Article
sources DOAJ
author Rituraj Sharma
Kiran Prasai
D. A. Drabold
K. V. Adarsh
spellingShingle Rituraj Sharma
Kiran Prasai
D. A. Drabold
K. V. Adarsh
Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
AIP Advances
author_facet Rituraj Sharma
Kiran Prasai
D. A. Drabold
K. V. Adarsh
author_sort Rituraj Sharma
title Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
title_short Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
title_full Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
title_fullStr Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
title_full_unstemmed Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
title_sort ultrafast defect dynamics: a new approach to all optical broadband switching employing amorphous selenium thin films
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-07-01
description Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.
url http://dx.doi.org/10.1063/1.4927543
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AT kiranprasai ultrafastdefectdynamicsanewapproachtoallopticalbroadbandswitchingemployingamorphousseleniumthinfilms
AT dadrabold ultrafastdefectdynamicsanewapproachtoallopticalbroadbandswitchingemployingamorphousseleniumthinfilms
AT kvadarsh ultrafastdefectdynamicsanewapproachtoallopticalbroadbandswitchingemployingamorphousseleniumthinfilms
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