Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications
Charge-trapping devices using multilayered dielectrics were studied for nonvolatile memory applications. The device structure is Al/Y2O3/Ta2O5/SiO2/Si (MYTOS). The MYTOS field effect transistors were fabricated using Ta2O5 as the charge storage layer and Y2O3 as the blocking layer. The electrical ch...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2013-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/548329 |
| Summary: | Charge-trapping devices using multilayered dielectrics were studied for nonvolatile memory applications. The device structure is Al/Y2O3/Ta2O5/SiO2/Si (MYTOS). The MYTOS field effect transistors were fabricated using Ta2O5 as the charge storage layer and Y2O3 as the blocking layer. The electrical characteristics of memory window, program/erase characteristics, and data retention were examined. The memory window is about 1.6 V. Using a pulse voltage of 6 V, a threshold voltage shift of ~1 V can be achieved within 10 ns. The MYTOS transistors can retain a memory window of 0.81 V for 10 years. |
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| ISSN: | 1687-8434 1687-8442 |