Analysis of TSV-Induced Mechanical Stress and Electrical Noise Coupling in Sub 5-nm Node Nanosheet FETs for Heterogeneous 3D-ICs

• Main Authors: Jinsu Jeong, Jun-Sik Yoon, Rock-Hyun Baek
• Format: Article
• Language: English
• Published: IEEE 2021-01-01
• Series: IEEE Access
• Subjects: Nanosheet FETs; fin-shaped FETs; sub 5-nm node; heterogeneous 3D-ICs; through-silicon vias (TSVs); TSV-induced mechanical stress
• Online Access: https://ieeexplore.ieee.org/document/9333571/
• ISSN: 2169-3536

Through-silicon via (TSV)-induced mechanical stress and electrical noise coupling effects on sub 5-nm node nanosheet field-effect transistors (NSFETs) were investigated comprehensively compared to fin-shaped FETs (FinFETs) using TCAD for heterogeneous 3D-ICs. TSV-induced channel length directional stress (S_ZZ) predominantly causes variations of on-state current (ΔI_on). NSFETs exhibit the greater ΔI_on than FinFETs because electron velocities and densities in channels vary with respect to SZZ in the same directions for NSFETs but do the opposite for FinFETs. Nevertheless, TSV-induced mechanical stress is negligible when TSV is farther than keep-out zone. Meanwhile, TSV signals can be coupled to operating devices through substrate and induce capacitive and back-bias noise coupling currents (I_cap, I_b-b). NSFETs exhibit the greater |I_cap|/I_on than FinFETs because its wider source/drain (S/D) epitaxies form larger depletion capacitances between drain and punch-through stopper (PTS). On the other hand, the |I_b-b|/I_on is smaller for NSFETs because its parasitic bottom transistor alleviates back-bias-induced potential barrier lowering. Furthermore, wide diameter of Cu of TSV increases |I_b-b|/I_on only, but short rise time of TSV signals increases both |I_cap|/I_on and |I_b-b|/I_on. Unfortunately, conventional devices cannot satisfy criterion for analog applications (|I_cap, I_b-b|/I_on <; 0.5%); therefore, a new strategy inserting bottom oxide (BOX) beneath the S/D with undoped PTS is suggested. The |I_cap|/I_on for NSFETs decreases by undoped PTS, but not for FinFETs due to a remnant depletion capacitance between fin and PTS. The |I_b-b|/I_on for NSFETs decreases remarkably due to completely blocked I_b-b path, but FinFETs still have I_b-b path under the fin. Therefore, NSFETs with BOX and undoped PTS are the most suitable for sub 5-nm node heterogeneous 3D-IC, especially in analog applications.