Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals
<p>The electrical characteristics of In-doped Cd<sub>0.9</sub>Zn<sub>0.1</sub>Te (CZT:In) crystals with concentration of С<sub>о</sub>=3,5*10<sup>17</sup> cm<sup>-3</sup>, which are used in X- and gamma-radiation detectors, were inves...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2019-10-01
|
| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3888 |
| Summary: | <p>The electrical characteristics of In-doped Cd<sub>0.9</sub>Zn<sub>0.1</sub>Te (CZT:In) crystals with concentration of С<sub>о</sub>=3,5*10<sup>17</sup> cm<sup>-3</sup>, which are used in X- and gamma-radiation detectors, were investigated during their growth. CZT:In crystals possess a weakly pronounced n-type conductivity and had a resistivity of (1¸2)*10<sup>9</sup> Ohm*cm at 293 K. In/CZT:In/In structures with ohmic contacts and Cr/CZT:In/In structures with Schottky barriers were created on this crystals. The temperature dependences of the resistivity in investigated material were analyzed and explained. The energy position of the deep level responsible for the material’ dark conductivity was found. Due to the study of the temperature dependence of currents limited by space-charge (SCLC) and of currents of the ohmic section of the volt-ampere characteristics (<em>I-VC</em>), the compensation degree of CZT:In crystals is determined. It was found that Cr/CZT:In/In structures with a Schottky diode, fabricated on crystals with a lower compensation degree, possessed the best detection properties than similar structures fabricated on crystals with a greater compensation degree.</p> |
|---|---|
| ISSN: | 1729-4428 2309-8589 |