Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices

Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evaluation results are described. Variability and fluctuation are critical in miniaturized semiconductor devices because signal voltage must be reduced in such devices. Especially, the signal voltage in mul...

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Bibliographic Details
Main Author: Akinobu Teramoto
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/10/15/1759

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