Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices
Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise, and evaluation results are described. Variability and fluctuation are critical in miniaturized semiconductor devices because signal voltage must be reduced in such devices. Especially, the signal voltage in mul...
Main Author: | Akinobu Teramoto |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-07-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/10/15/1759 |
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