Periodic molybdenum disc array for light trapping in amorphous silicon layer

Periodic molybdenum disc array for light trapping in amorphous silicon layer

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method...

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Main Authors: Jiwei Wang, Kang Yang, Haiyan Chen, Changkai Deng, Dongdong Li, Xiaoyuan Chen, Wei Ren
Format: Article
Language:English
Published: AIP Publishing LLC 2016-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4948964
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spelling doaj-ab187862e28145c1923e15f78c127f3f2020-11-24T22:58:47ZengAIP Publishing LLCAIP Advances2158-32262016-05-0165055305055305-810.1063/1.4948964020605ADVPeriodic molybdenum disc array for light trapping in amorphous silicon layerJiwei Wang0Kang Yang1Haiyan Chen2Changkai Deng3Dongdong Li4Xiaoyuan Chen5Wei Ren6International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 ChinaShanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 ChinaShanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 ChinaInternational Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 ChinaShanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 ChinaShanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 ChinaInternational Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 ChinaWe demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.http://dx.doi.org/10.1063/1.4948964
collection DOAJ
language English
format Article
sources DOAJ
author Jiwei Wang
Kang Yang
Haiyan Chen
Changkai Deng
Dongdong Li
Xiaoyuan Chen
Wei Ren
spellingShingle Jiwei Wang
Kang Yang
Haiyan Chen
Changkai Deng
Dongdong Li
Xiaoyuan Chen
Wei Ren
Periodic molybdenum disc array for light trapping in amorphous silicon layer
AIP Advances
author_facet Jiwei Wang
Kang Yang
Haiyan Chen
Changkai Deng
Dongdong Li
Xiaoyuan Chen
Wei Ren
author_sort Jiwei Wang
title Periodic molybdenum disc array for light trapping in amorphous silicon layer
title_short Periodic molybdenum disc array for light trapping in amorphous silicon layer
title_full Periodic molybdenum disc array for light trapping in amorphous silicon layer
title_fullStr Periodic molybdenum disc array for light trapping in amorphous silicon layer
title_full_unstemmed Periodic molybdenum disc array for light trapping in amorphous silicon layer
title_sort periodic molybdenum disc array for light trapping in amorphous silicon layer
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-05-01
description We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.
url http://dx.doi.org/10.1063/1.4948964
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AT haiyanchen periodicmolybdenumdiscarrayforlighttrappinginamorphoussiliconlayer
AT changkaideng periodicmolybdenumdiscarrayforlighttrappinginamorphoussiliconlayer
AT dongdongli periodicmolybdenumdiscarrayforlighttrappinginamorphoussiliconlayer
AT xiaoyuanchen periodicmolybdenumdiscarrayforlighttrappinginamorphoussiliconlayer
AT weiren periodicmolybdenumdiscarrayforlighttrappinginamorphoussiliconlayer
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