Influence of Fringing-Field on DC/AC Characteristics of Si&#x2081;&#x208B;<italic>&#x2093;</italic>Ge<italic>&#x2093;</italic> Based Multi-Channel Tunnel FETs

Influence of Fringing-Field on DC/AC Characteristics of Si&#x2081;&#x208B;<italic>&#x2093;</italic>Ge<italic>&#x2093;</italic> Based Multi-Channel Tunnel FETs

Tunnel field-effect transistors (TFETs) are the decent performance estimators in the prospective of short-channel effects. In such structures, a small inter-gate separation (IGS) is a key factor that appraises for high packed-density with more number of channels (N) to deliver superior performance....

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Bibliographic Details
Main Authors: Narasimhulu Thoti, Yiming Li
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Band-to-band tunneling model
channel number (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">N</italic>)
fringing-field
inter-gate separation
multi-channel tunnel-field effect transistor
Si₁₋<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">ₓ</italic>Ge<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">ₓ</italic>
Online Access:https://ieeexplore.ieee.org/document/9258903/

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