Radiation-sensitive field effect transistor response to gamma-ray irradiation

• Main Authors: Pejović Milić M., Pejović Momčilo M., Jakšić Aleksandar B.
• Format: Article
• Language: English
• Published: VINCA Institute of Nuclear Sciences 2011-01-01
• Series: Nuclear Technology and Radiation Protection
• Subjects: p-channel MOS transistor; interface traps; oxide trapped charge; radiation sensitivity
• Online Access: http://www.doiserbia.nb.rs/img/doi/1451-3994/2011/1451-39941101025P.pdf

The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the gate bias during the irradiation of 5 V and 10 V the sensitivity of these transistors can be presented as the threshold voltage shift and the absorbed irradiation dose ratio. On the bases of the subthreshold characteristics and transfer characteristics in saturation using the midgap technique we have determined the densities of radiation induced oxide traps and interface traps responsible for the threshold voltage shift. In addition, the charge pumping technique was used to determine the energy density of true interface traps. It has been shown that radiation-induced oxide traps have dominant role on threshold voltage shift, especially for gate biases during the irradiation of 5 V and 10 V.