Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

Silicon co-integration offers compelling scale-up opportunities for quantum computing. In this framework, cryogenic temperature is required for the coherence of solid-state quantum devices. This paper reports the characterization of an nMOS quantum-dot dedicated structure below 100 mK. The device un...

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Bibliographic Details
Main Authors: P. Galy, J. Camirand Lemyre, P. Lemieux, F. Arnaud, D. Drouin, Michel Pioro-Ladriere
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
FD-SOI
quantum computing
co-integration
cryogenic temperature
Online Access:https://ieeexplore.ieee.org/document/8370029/

Internet

https://ieeexplore.ieee.org/document/8370029/

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