Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resis...

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Bibliographic Details
Main Authors: U. N. Roy, O. K. Okobiah, G. S. Camarda, Y. Cui, R. Gul, A. Hossain, G. Yang, S. U. Egarievwe, R. B. James
Format: Article
Language:English
Published: AIP Publishing LLC 2018-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5040362
Description
Summary:We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ∼1.7x10-3 cm2/V. An energy resolution of ∼7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.
ISSN:2158-3226

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