Boron quantum dots all-optical modulator based on efficient photothermal effect

• Main Authors: Cong Wang, Qianyuan Chen, Hualong Chen, Jun Liu, Yufeng Song, Jie Liu, Delong Li, Yanqi Ge, Youning Gong, Yupeng Zhang, Han Zhang
• Format: Article
• Language: English
• Published: Institue of Optics and Electronics, Chinese Academy of Sciences 2021-07-01
• Series: Opto-Electronic Advances
• Subjects: boron quantum dots; all-optical modulator; photothermal conversion; actively q-switched laser
• Online Access: http://www.oejournal.org/article/doi/10.29026/oea.2021.200032

All-optical devices without external electronic components have drawn extraordinary attentions in all-optical communication. In this work, boron quantum dots (BQDs) were synthesized by a facile liquid-phase exfoliation method. The as-prepared BQDs showed good structural homogeneity and crystallinity, broadband optical absorption as well as excellent photothermal properties. Femtosecond-resolved transient absorption further revealed the short carrier relaxation time of BQDs. Inspired by the outstanding photothermal properties and ultrafast carrier dynamic of BQDs, we fabricated BQDs-based all-optical modulator. The phase shift with a slope efficiency of 0.032 π/mW and response time of 0.97 ms can be achieved. The modulator was used in laser resonance cavity to achieve all-optical actively Q-switched laser operation with control repetition rate. This prototypical BQDs-based all-optical modulator shows a great potential to be applied in all-optical information processing and communication.