Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants
Incorporating dopants in the graphene lattice to tune its electronic properties is a challenging task. Here, the authors report a strategy to dope epitaxial large-area graphene on SiC by means of spin-coating deposition of F4TCNQ polymers in ambient conditions.
Main Authors: | Hans He, Kyung Ho Kim, Andrey Danilov, Domenico Montemurro, Liyang Yu, Yung Woo Park, Floriana Lombardi, Thilo Bauch, Kasper Moth-Poulsen, Tihomir Iakimov, Rositsa Yakimova, Per Malmberg, Christian Müller, Sergey Kubatkin, Samuel Lara-Avila |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2018-09-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-018-06352-5 |
Similar Items
-
Epitaxial Graphene on SiC: A Review of Growth and Characterization
by: Gholam Reza Yazdi, et al.
Published: (2016-05-01) -
Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals
by: Ivan Shtepliuk, et al.
Published: (2016-11-01) -
Fundamentals of Environmental Monitoring of Heavy Metals Using Graphene
by: Ivan Shtepliuk, et al.
Published: (2019-04-01) -
Investigation of coating uniformity in spin-on-dopant process
by: Sheng-Yu Zhang, et al.
Published: (2019) -
On the interaction of toxic Heavy Metals (Cd, Hg, Pb) with graphene quantum dots and infinite graphene
by: Ivan Shtepliuk, et al.
Published: (2017-06-01)