Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop are...

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Bibliographic Details
Main Authors: Z. Biolek, D. Biolek, V. Biolkova
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2013-04-01
Series:Radioengineering
Subjects:
Memory element
memristor
pinched hysteresis loop
Online Access:http://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf
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spelling doaj-a8c2f616cf924450ad9eb667ef2030d62020-11-25T00:42:07ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122013-04-01221132135Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-ElementsZ. BiolekD. BiolekV. BiolkovaThe memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdfMemory elementmemristorpinched hysteresis loop
collection DOAJ
language English
format Article
sources DOAJ
author Z. Biolek
D. Biolek
V. Biolkova
spellingShingle Z. Biolek
D. Biolek
V. Biolkova
Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
Radioengineering
Memory element
memristor
pinched hysteresis loop
author_facet Z. Biolek
D. Biolek
V. Biolkova
author_sort Z. Biolek
title Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
title_short Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
title_full Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
title_fullStr Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
title_full_unstemmed Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
title_sort analytical computation of the area of pinched hysteresis loops of ideal mem-elements
publisher Spolecnost pro radioelektronicke inzenyrstvi
series Radioengineering
issn 1210-2512
publishDate 2013-04-01
description The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
topic Memory element
memristor
pinched hysteresis loop
url http://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf
work_keys_str_mv AT zbiolek analyticalcomputationoftheareaofpinchedhysteresisloopsofidealmemelements
AT dbiolek analyticalcomputationoftheareaofpinchedhysteresisloopsofidealmemelements
AT vbiolkova analyticalcomputationoftheareaofpinchedhysteresisloopsofidealmemelements
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