Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop are...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Spolecnost pro radioelektronicke inzenyrstvi
2013-04-01
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| Series: | Radioengineering |
| Subjects: | |
| Online Access: | http://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf |
| Summary: | The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example. |
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| ISSN: | 1210-2512 |