Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model
In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by n...
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Hindawi Limited
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.175 |
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doaj-a890cf3ac12c48a39c679b00c7b206ca2020-11-24T22:21:09ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312001-01-0123417518310.1155/APEC.23.175Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation ModelC. -T. Salame0Radiation Technology, Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The NetherlandsIn this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively. Values of this resistance are extracted for different positive bias applied between the gate and the source (+VGS). Physicals parameters obtained from the numerical analysis are inspected, and results shows that the numerically analysed junction characteristic is in very good correlation with the electrical measurementhttp://dx.doi.org/10.1155/APEC.23.175 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
C. -T. Salame |
| spellingShingle |
C. -T. Salame Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model Active and Passive Electronic Components |
| author_facet |
C. -T. Salame |
| author_sort |
C. -T. Salame |
| title |
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model |
| title_short |
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model |
| title_full |
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model |
| title_fullStr |
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model |
| title_full_unstemmed |
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model |
| title_sort |
extraction of rds(on) of n-channel power mosfet by numerical simulation model |
| publisher |
Hindawi Limited |
| series |
Active and Passive Electronic Components |
| issn |
0882-7516 1563-5031 |
| publishDate |
2001-01-01 |
| description |
In this paper we present an original method for n-channel power MOSFET resistance
extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively. Values of this resistance are extracted for different positive bias applied between the gate and the source (+VGS). Physicals parameters obtained from the numerical analysis are inspected, and results shows that the numerically analysed junction characteristic is in very good correlation with the electrical measurement |
| url |
http://dx.doi.org/10.1155/APEC.23.175 |
| work_keys_str_mv |
AT ctsalame extractionofrdsonofnchannelpowermosfetbynumericalsimulationmodel |
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1725771886167588864 |