Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices
ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2”-wafer of SiO2/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 109 to 11.28 x 109 dyne/cm2 with c...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922911 |