Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
L.N. Gumilyov Eurasian National University
2019-07-01
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| Series: | Eurasian Journal of Physics and Functional Materials |
| Subjects: | |
| Online Access: | http://ephys.kz/files/2019-09-23_Vol3_no3(7).pdf |