Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-...

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Main Authors:	A.S. Rysbaev, I.R. Bekpulatov, B.D. Igamov, Sh.X. Juraev
Format:	Article
Language:	English
Published:	L.N. Gumilyov Eurasian National University 2019-07-01
Series:	Eurasian Journal of Physics and Functional Materials
Subjects:	silicon implantation semiconductor nanosize surface silicide single crystal ion dose.
Online Access:	http://ephys.kz/files/2019-09-23_Vol3_no3(7).pdf

id	doaj-a810b115eb5e4050966d3ca1e73872e2
record_format	Article
spelling	doaj-a810b115eb5e4050966d3ca1e73872e22020-11-25T00:05:18ZengL.N. Gumilyov Eurasian National UniversityEurasian Journal of Physics and Functional Materials2522-98692616-85372019-07-013325425910.29317/ejpfm.2019030307Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealingA.S. Rysbaev0I.R. Bekpulatov1B.D. Igamov2Sh.X. Juraev3Tashkent State Technical University, Tashkent, UzbekistanInstitute of Fire Safety of the Ministry of Emergencies of the Republic of Uzbekistan, Tashkent, UzbekistanTashkent State Technical University, Tashkent, UzbekistanTermez State University, Termez, UzbekistanThe change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.http://ephys.kz/files/2019-09-23_Vol3_no3(7).pdfsiliconimplantationsemiconductornanosizesurfacesilicidesingle crystaliondose.
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	A.S. Rysbaev I.R. Bekpulatov B.D. Igamov Sh.X. Juraev
spellingShingle	A.S. Rysbaev I.R. Bekpulatov B.D. Igamov Sh.X. Juraev Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing Eurasian Journal of Physics and Functional Materials silicon implantation semiconductor nanosize surface silicide single crystal ion dose.
author_facet	A.S. Rysbaev I.R. Bekpulatov B.D. Igamov Sh.X. Juraev
author_sort	A.S. Rysbaev
title	Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
title_short	Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
title_full	Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
title_fullStr	Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
title_full_unstemmed	Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
title_sort	change of electrophysical properties of the si(111) and si(100) surface in the process of ion implantation and next annealing
publisher	L.N. Gumilyov Eurasian National University
series	Eurasian Journal of Physics and Functional Materials
issn	2522-9869 2616-8537
publishDate	2019-07-01
description	The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.
topic	silicon implantation semiconductor nanosize surface silicide single crystal ion dose.
url	http://ephys.kz/files/2019-09-23_Vol3_no3(7).pdf
work_keys_str_mv	AT asrysbaev changeofelectrophysicalpropertiesofthesi111andsi100surfaceintheprocessofionimplantationandnextannealing AT irbekpulatov changeofelectrophysicalpropertiesofthesi111andsi100surfaceintheprocessofionimplantationandnextannealing AT bdigamov changeofelectrophysicalpropertiesofthesi111andsi100surfaceintheprocessofionimplantationandnextannealing AT shxjuraev changeofelectrophysicalpropertiesofthesi111andsi100surfaceintheprocessofionimplantationandnextannealing
_version_	1725425816092803072

Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

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