EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES

EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES

The results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets th...

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Main Authors: D. A. Yatsyna, D. B. Migas, Y. S. Arsitov, A. B. Filonov, B. S. Kolosnitsyn
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
а<sup>iii</sup>-b<sup>v</sup> наношнуры
морфология и зонная структура наношнуров
Online Access:https://doklady.bsuir.by/jour/article/view/495
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spelling doaj-a7a096ffd5e34b6393855d2a50daacab2021-07-28T16:19:51ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01037782494EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRESD. A. Yatsyna0D. B. Migas1Y. S. Arsitov2A. B. Filonov3B. S. Kolosnitsyn4Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиThe results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets the formation of small-sized {112} edges between adjacent {011} facets results in a stable structure and removes the surface states in the band-gap area without the hydrogen passivation.https://doklady.bsuir.by/jour/article/view/495а<sup>iii</sup>-b<sup>v</sup> наношнурыморфология и зонная структура наношнуров
collection DOAJ
language Russian
format Article
sources DOAJ
author D. A. Yatsyna
D. B. Migas
Y. S. Arsitov
A. B. Filonov
B. S. Kolosnitsyn
spellingShingle D. A. Yatsyna
D. B. Migas
Y. S. Arsitov
A. B. Filonov
B. S. Kolosnitsyn
EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
а<sup>iii</sup>-b<sup>v</sup> наношнуры
морфология и зонная структура наношнуров
author_facet D. A. Yatsyna
D. B. Migas
Y. S. Arsitov
A. B. Filonov
B. S. Kolosnitsyn
author_sort D. A. Yatsyna
title EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
title_short EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
title_full EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
title_fullStr EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
title_full_unstemmed EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
title_sort effect of morphology on electronic properties of the <111> -oriented gaas, gap, gasb, inas, inp and insb nanowires
publisher Educational institution «Belarusian State University of Informatics and Radioelectronics»
series Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn 1729-7648
publishDate 2019-06-01
description The results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets the formation of small-sized {112} edges between adjacent {011} facets results in a stable structure and removes the surface states in the band-gap area without the hydrogen passivation.
topic а<sup>iii</sup>-b<sup>v</sup> наношнуры
морфология и зонная структура наношнуров
url https://doklady.bsuir.by/jour/article/view/495
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AT dbmigas effectofmorphologyonelectronicpropertiesofthe111orientedgaasgapgasbinasinpandinsbnanowires
AT ysarsitov effectofmorphologyonelectronicpropertiesofthe111orientedgaasgapgasbinasinpandinsbnanowires
AT abfilonov effectofmorphologyonelectronicpropertiesofthe111orientedgaasgapgasbinasinpandinsbnanowires
AT bskolosnitsyn effectofmorphologyonelectronicpropertiesofthe111orientedgaasgapgasbinasinpandinsbnanowires
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