EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
The results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets th...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/495 |