ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

The SiO<sub>2</sub> generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidiz...

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Main Authors: Shin Yong Joo, Chadrasekhar Loka, Young Woong Jo, Maddipatla Reddyprakash, Sung Whan Moon, YiSik Choi, Seong Eui Lee, Gue Serb Cho, Kee-Sun Lee
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Coatings
Subjects:
thin film: sputtering
ito
sio<sub>2</sub>
low-temperature oxidation
touch screen panel
sapphire
transmittance
Online Access:https://www.mdpi.com/2079-6412/10/2/134
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spelling doaj-a786a64ffdf94496bfdb3bd69d2085742020-11-25T01:30:41ZengMDPI AGCoatings2079-64122020-02-0110213410.3390/coatings10020134coatings10020134ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen PanelsShin Yong Joo0Chadrasekhar Loka1Young Woong Jo2Maddipatla Reddyprakash3Sung Whan Moon4YiSik Choi5Seong Eui Lee6Gue Serb Cho7Kee-Sun Lee8Department of Advanced Materials Engineering &amp; Smart Natural Space Research Center, Kongju National University, Cheonan-si 331080, KoreaDepartment of Advanced Materials Engineering &amp; Smart Natural Space Research Center, Kongju National University, Cheonan-si 331080, KoreaDepartment of Advanced Materials Engineering &amp; Smart Natural Space Research Center, Kongju National University, Cheonan-si 331080, KoreaDepartment of Advanced Materials Engineering &amp; Smart Natural Space Research Center, Kongju National University, Cheonan-si 331080, KoreaSapphire Technology Co. Ltd., Hwaseong-si 445992, KoreaSapphire Technology Co. Ltd., Hwaseong-si 445992, KoreaDepartment of Advanced Materials Engineering, Korea Polytechnic University, 237 Sangidaehak-ro, Siheung-si 406840, KoreaAdvanced Process and Materials Group, Korea Institute of Industrial Technology, 156 Gaetbeol-ro, Incheon-si 429450, Gyeonggi-do, KoreaDepartment of Advanced Materials Engineering &amp; Smart Natural Space Research Center, Kongju National University, Cheonan-si 331080, KoreaThe SiO<sub>2</sub> generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO<sub>2</sub>. Furthermore, when the insulating SiO<sub>2</sub> film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO<sub>2</sub>/ITO) on a sapphire substrate, the SiO<sub>2</sub> film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO<sub>2</sub>/ITO films is about 88.3%. The change in capacitance of the ITO/SiO<sub>2</sub>/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.https://www.mdpi.com/2079-6412/10/2/134thin film: sputteringitosio<sub>2</sub>low-temperature oxidationtouch screen panelsapphiretransmittance
collection DOAJ
language English
format Article
sources DOAJ
author Shin Yong Joo
Chadrasekhar Loka
Young Woong Jo
Maddipatla Reddyprakash
Sung Whan Moon
YiSik Choi
Seong Eui Lee
Gue Serb Cho
Kee-Sun Lee
spellingShingle Shin Yong Joo
Chadrasekhar Loka
Young Woong Jo
Maddipatla Reddyprakash
Sung Whan Moon
YiSik Choi
Seong Eui Lee
Gue Serb Cho
Kee-Sun Lee
ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels
Coatings
thin film: sputtering
ito
sio<sub>2</sub>
low-temperature oxidation
touch screen panel
sapphire
transmittance
author_facet Shin Yong Joo
Chadrasekhar Loka
Young Woong Jo
Maddipatla Reddyprakash
Sung Whan Moon
YiSik Choi
Seong Eui Lee
Gue Serb Cho
Kee-Sun Lee
author_sort Shin Yong Joo
title ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels
title_short ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels
title_full ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels
title_fullStr ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels
title_full_unstemmed ITO/SiO<sub>2</sub>/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels
title_sort ito/sio<sub>2</sub>/ito structure on a sapphire substrate using the oxidation of ultra-thin si films as an insulating layer for one-glass-solution capacitive touch-screen panels
publisher MDPI AG
series Coatings
issn 2079-6412
publishDate 2020-02-01
description The SiO<sub>2</sub> generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO<sub>2</sub>. Furthermore, when the insulating SiO<sub>2</sub> film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO<sub>2</sub>/ITO) on a sapphire substrate, the SiO<sub>2</sub> film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO<sub>2</sub>/ITO films is about 88.3%. The change in capacitance of the ITO/SiO<sub>2</sub>/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.
topic thin film: sputtering
ito
sio<sub>2</sub>
low-temperature oxidation
touch screen panel
sapphire
transmittance
url https://www.mdpi.com/2079-6412/10/2/134
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