Metal-assisted chemical etching using sputtered gold: a simple route to black silicon

Metal-assisted chemical etching using sputtered gold: a simple route to black silicon

We report an accessible and simple method of producing 'black silicon' with aspect ratios as high as 8 using common laboratory equipment. Gold was sputtered to a thickness of 8 nm using a low-vacuum sputter coater. The structures were etched into silicon substrates using an aqueous H2O2/HF...

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Main Author: Agnieszka Kurek and Sean T Barry
Format: Article
Language:English
Published: Taylor & Francis Group 2011-01-01
Series:Science and Technology of Advanced Materials
Online Access:http://iopscience.iop.org/1468-6996/12/4/045001
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spelling doaj-a78387dadd16457caecaa6a113c3eb802020-11-25T02:35:43ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142011-01-01124045001Metal-assisted chemical etching using sputtered gold: a simple route to black silicon Agnieszka Kurek and Sean T BarryWe report an accessible and simple method of producing 'black silicon' with aspect ratios as high as 8 using common laboratory equipment. Gold was sputtered to a thickness of 8 nm using a low-vacuum sputter coater. The structures were etched into silicon substrates using an aqueous H2O2/HF solution, and the gold was then removed using aqua regia. Ultrasonication was necessary to produce columnar structures, and an etch time of 24 min gave a velvety, non-reflective surface. The surface features after 24 min etching were uniformly microstructured over an area of square centimetres.http://iopscience.iop.org/1468-6996/12/4/045001
collection DOAJ
language English
format Article
sources DOAJ
author Agnieszka Kurek and Sean T Barry
spellingShingle Agnieszka Kurek and Sean T Barry
Metal-assisted chemical etching using sputtered gold: a simple route to black silicon
Science and Technology of Advanced Materials
author_facet Agnieszka Kurek and Sean T Barry
author_sort Agnieszka Kurek and Sean T Barry
title Metal-assisted chemical etching using sputtered gold: a simple route to black silicon
title_short Metal-assisted chemical etching using sputtered gold: a simple route to black silicon
title_full Metal-assisted chemical etching using sputtered gold: a simple route to black silicon
title_fullStr Metal-assisted chemical etching using sputtered gold: a simple route to black silicon
title_full_unstemmed Metal-assisted chemical etching using sputtered gold: a simple route to black silicon
title_sort metal-assisted chemical etching using sputtered gold: a simple route to black silicon
publisher Taylor & Francis Group
series Science and Technology of Advanced Materials
issn 1468-6996
1878-5514
publishDate 2011-01-01
description We report an accessible and simple method of producing 'black silicon' with aspect ratios as high as 8 using common laboratory equipment. Gold was sputtered to a thickness of 8 nm using a low-vacuum sputter coater. The structures were etched into silicon substrates using an aqueous H2O2/HF solution, and the gold was then removed using aqua regia. Ultrasonication was necessary to produce columnar structures, and an etch time of 24 min gave a velvety, non-reflective surface. The surface features after 24 min etching were uniformly microstructured over an area of square centimetres.
url http://iopscience.iop.org/1468-6996/12/4/045001
work_keys_str_mv AT agnieszkakurekandseantbarry metalassistedchemicaletchingusingsputteredgoldasimpleroutetoblacksilicon
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