Coulomb engineering of the bandgap and excitons in two-dimensional materials
Electronic bandgap tuning in semiconductors enables key functionalities in solid-state devices. Here, the authors present a strategy to control the bandgap of atomically thin WS2 and WSe2semiconductors via manipulation of the surrounding dielectric environment rather than by modifications of the mat...
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2017-05-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/ncomms15251 |
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doaj-a5b39dc701f44ba1966f1cdb0631887c2021-05-11T07:46:26ZengNature Publishing GroupNature Communications2041-17232017-05-01811710.1038/ncomms15251Coulomb engineering of the bandgap and excitons in two-dimensional materialsArchana Raja0Andrey Chaves1Jaeeun Yu2Ghidewon Arefe3Heather M. Hill4Albert F. Rigosi5Timothy C. Berkelbach6Philipp Nagler7Christian Schüller8Tobias Korn9Colin Nuckolls10James Hone11Louis E. Brus12Tony F. Heinz13David R. Reichman14Alexey Chernikov15Departments of Physics and Electrical Engineering, Columbia UniversityDepartment of Chemistry, Columbia UniversityDepartment of Chemistry, Columbia UniversityDepartment of Mechanical Engineering, Columbia UniversityDepartments of Physics and Electrical Engineering, Columbia UniversityDepartments of Physics and Electrical Engineering, Columbia UniversityDepartment of Chemistry and James Franck Institute, University of ChicagoDepartment of Physics, University of RegensburgDepartment of Physics, University of RegensburgDepartment of Physics, University of RegensburgDepartment of Chemistry, Columbia UniversityDepartment of Mechanical Engineering, Columbia UniversityDepartment of Chemistry, Columbia UniversityDepartments of Physics and Electrical Engineering, Columbia UniversityDepartment of Chemistry, Columbia UniversityDepartments of Physics and Electrical Engineering, Columbia UniversityElectronic bandgap tuning in semiconductors enables key functionalities in solid-state devices. Here, the authors present a strategy to control the bandgap of atomically thin WS2 and WSe2semiconductors via manipulation of the surrounding dielectric environment rather than by modifications of the materials themselves.https://doi.org/10.1038/ncomms15251 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Archana Raja Andrey Chaves Jaeeun Yu Ghidewon Arefe Heather M. Hill Albert F. Rigosi Timothy C. Berkelbach Philipp Nagler Christian Schüller Tobias Korn Colin Nuckolls James Hone Louis E. Brus Tony F. Heinz David R. Reichman Alexey Chernikov |
spellingShingle |
Archana Raja Andrey Chaves Jaeeun Yu Ghidewon Arefe Heather M. Hill Albert F. Rigosi Timothy C. Berkelbach Philipp Nagler Christian Schüller Tobias Korn Colin Nuckolls James Hone Louis E. Brus Tony F. Heinz David R. Reichman Alexey Chernikov Coulomb engineering of the bandgap and excitons in two-dimensional materials Nature Communications |
author_facet |
Archana Raja Andrey Chaves Jaeeun Yu Ghidewon Arefe Heather M. Hill Albert F. Rigosi Timothy C. Berkelbach Philipp Nagler Christian Schüller Tobias Korn Colin Nuckolls James Hone Louis E. Brus Tony F. Heinz David R. Reichman Alexey Chernikov |
author_sort |
Archana Raja |
title |
Coulomb engineering of the bandgap and excitons in two-dimensional materials |
title_short |
Coulomb engineering of the bandgap and excitons in two-dimensional materials |
title_full |
Coulomb engineering of the bandgap and excitons in two-dimensional materials |
title_fullStr |
Coulomb engineering of the bandgap and excitons in two-dimensional materials |
title_full_unstemmed |
Coulomb engineering of the bandgap and excitons in two-dimensional materials |
title_sort |
coulomb engineering of the bandgap and excitons in two-dimensional materials |
publisher |
Nature Publishing Group |
series |
Nature Communications |
issn |
2041-1723 |
publishDate |
2017-05-01 |
description |
Electronic bandgap tuning in semiconductors enables key functionalities in solid-state devices. Here, the authors present a strategy to control the bandgap of atomically thin WS2 and WSe2semiconductors via manipulation of the surrounding dielectric environment rather than by modifications of the materials themselves. |
url |
https://doi.org/10.1038/ncomms15251 |
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