Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory
This paper presents a novel TaN-Al2O3-HfSiOx-SiO2-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiOx/SiO2 interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunn...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-08-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/8/8/5112 |