Terahertz Performance of a GaN-Based Planar Nanochannel Device
Main Authors: | K. Y. Xu, Y. N. Wang, C. J. Zheng, J. W. Xiong, G. Wang |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2014-01-01
|
Series: | Journal of Nanomaterials |
Online Access: | http://dx.doi.org/10.1155/2014/850915 |
Similar Items
-
Influence of Electric Field Coupling Model on the Simulated Performances of a GaN Based Planar Nanodevice
by: K. Y. Xu, et al.
Published: (2013-01-01) -
Study of terahertz phenomena using GaN devices
by: Penot, Alexandre
Published: (2013) -
Scaling Effect in Gate-Recessed AlGaN/GaN Fin-Nanochannel Array MOSHEMTs
by: Jhang-Jie Jia, et al.
Published: (2020-01-01) -
Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
by: Ki-Sik Im, et al.
Published: (2020-09-01) -
Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies
by: Ying Wang, et al.
Published: (2018-12-01)