Transport Phenomena in thin Films of SnTe Doped Stibium

The influence of the thickness of thin films based on compounds SnTe: Sb, deposited on Sital substrates at their structure and mechanisms of carrier scattering are researched. The dominant role of scattering on the surface due to the increasing size of nanocrystals with increasing of thickness vapor...

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Bibliographic Details
Main Authors: B. S. Dzundza, O. B. Kostyuk, V. І. Makovyshyn, A. І. Tkachuk
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2016-10-01
Series:Фізика і хімія твердого тіла
Online Access:http://journals.pu.if.ua/index.php/pcss/article/view/783
Description
Summary:The influence of the thickness of thin films based on compounds SnTe: Sb, deposited on Sital substrates at their structure and mechanisms of carrier scattering are researched. The dominant role of scattering on the surface due to the increasing size of nanocrystals with increasing of thickness vapor-phase structures are defined.<strong> Keywords:</strong> tin telluride, scattering mechanisms, mobility, surface, nanostructure.
ISSN:1729-4428
2309-8589