Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at% Ga–ZnO thin films
Pure and 1 at% gallium (Ga)-doped zinc oxide (ZnO) thin films have been prepared with a low-cost spin coating technique on quartz substrates and annealed at 500 °C in vacuum ~10−3 mbar to create anion vacancies and generate charge carriers for photovoltaic application. Also, 0.5–1.5 at% extra zinc s...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2013-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://dx.doi.org/10.1088/1468-6996/14/6/065002 |