ANAHTAR ELEMANI OLARAK KULLANILAN BJT DEVRESİNDE ÇALIŞMA GERİLİMİNİN (DAYANMA GERİLİMİ) YÜKSELTİLMESİ

ANAHTAR ELEMANI OLARAK KULLANILAN BJT DEVRESİNDE ÇALIŞMA GERİLİMİNİN (DAYANMA GERİLİMİ) YÜKSELTİLMESİ

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Transistör kullanılarak yapılan devre tasarımında transistörün elektriksel parametreleri dikkate alınmak durumundadır. Bu parametrelerden VCBO (Kollektör-Baz ters dayanma gerilimi) ise tasarımcıya engel oluşturan en önemli faktördür. Dayanma gerilimi 50 V olan transistör kullanılarak 80 V genliğinde...

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Bibliographic Details
Main Author:	Mustafa SÖNMEZ
Format:	Article
Language:	English
Published:	Pamukkale University 1997-03-01
Series:	Pamukkale University Journal of Engineering Sciences
Subjects:	Breakdown voltage Switching devices BJT transistor Dayanma gerilimi Anahtar elemanı BJT transistör
Online Access:	http://dergipark.gov.tr/pajes/issue/20549/219004?publisher=pamukkale

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