Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)
Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. We report successful resistive switching of our devices in the temperature ra...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5140994 |