Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)

Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)

Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. We report successful resistive switching of our devices in the temperature ra...

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Bibliographic Details
Main Authors: Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin
Format: Article
Language:English
Published: AIP Publishing LLC 2020-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5140994

Internet

http://dx.doi.org/10.1063/1.5140994

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