Oxygen vacancy induced electronic structure variation in the La0.2Sr0.8MnO3 thin film

Oxygen vacancy in different oxide systems shows up as a crucial parameter in modulation of the emerging application-oriented functionalities. A systematic exploration on the relation between oxygen vacancy and electronic structure of the La0.2Sr0.8MnO3 (LSMO) thin film has been carried out through s...

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Bibliographic Details
Main Authors: Jiali Zhao, Chen Liu, Jinmei Li, Rui Wu, Jiaou Wang, Haijie Qian, Haizhong Guo, Jiankun Li, Kurash Ibrahim
Format: Article
Language:English
Published: AIP Publishing LLC 2019-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5088738
Description
Summary:Oxygen vacancy in different oxide systems shows up as a crucial parameter in modulation of the emerging application-oriented functionalities. A systematic exploration on the relation between oxygen vacancy and electronic structure of the La0.2Sr0.8MnO3 (LSMO) thin film has been carried out through sequential surface treatments followed by a series of wide scan XPS, O 1s XPS, O-K edge XAS, Mn-L edge XAS and work function measurements. Experimental results demonstrate mutual corroborative certifying evidences in between the different photoemission spectral measurements on the evolution and influence of the oxygen vacancy. Spectral characteristic features observed in the work are applicable using as justification fingerprint for the existence, modulation, or elimination of the oxygen vacancy in similar perovskite type oxide systems.
ISSN:2158-3226