Numerical investigation into optical and electronic performance of crystal orientation-dependent InGaAs/InP near-infrared laser

Numerical investigation into optical and electronic performance of crystal orientation-dependent InGaAs/InP near-infrared laser

The energy band dispersion profile and their dependence on crystal orientation for III-V zinc-blende compound quantum wells (QW) have earned significant attention in recent years due to reduced band mixing effects emerging from increased energy separation between valence subbands. So QW like InGaAs...

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Bibliographic Details
Main Authors: Sourav Roy, Kusay Faisal Al-tabatabai, Aniruddha Chakraborty, Md. Alamgir Kabir, Md. Sanwar Hossain, Lway Faisal Abdulrazak, Ashraful Hossain Howlader, Md. Rafiqul Islam, Md. B. Hossain
Format: Article
Language:English
Published: Elsevier 2021-07-01
Series:Results in Physics
Subjects:
Crystal orientation
Near-infrared laser
InGaAs
Valence band
Frequency response
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721004794

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