Piezoresistive Sensitivity, Linearity and Resistance Time Drift of Polysilicon Nanofilms with Different Deposition Temperatures

Piezoresistive Sensitivity, Linearity and Resistance Time Drift of Polysilicon Nanofilms with Different Deposition Temperatures

Our previous research work indicated that highly boron doped polysilicon nanofilms (≤100 nm in thickness) have higher gauge factor (the maximum is ~34 for 80 nm-thick films) and better temperature stability than common polysilicon films (≥ 200nm in thickness) at the same doping levels. Therefore, in...

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Bibliographic Details
Main Authors: Changzhi Shi, Xiaowei Liu, Rongyan Chuai
Format: Article
Language:English
Published: MDPI AG 2009-02-01
Series:Sensors
Subjects:
Polysilicon nanofilm
Piezoresistive effect
Linearity
Resistance time drift
Tunneling
Interstitial-vacancy pair
Deposition temperature
Online Access:http://www.mdpi.com/1424-8220/9/2/1141/

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http://www.mdpi.com/1424-8220/9/2/1141/

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