A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical...

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Main Authors: Maria-Alexandra Paun, Jean-Michel Sallese, Maher Kayal
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2013/968647
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spelling doaj-a08cea1a61a440f98d5457035ee16c262020-11-25T00:06:30ZengHindawi LimitedAdvances in Condensed Matter Physics1687-81081687-81242013-01-01201310.1155/2013/968647968647A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature EffectsMaria-Alexandra Paun0Jean-Michel Sallese1Maher Kayal2STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, SwitzerlandSTI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, SwitzerlandSTI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, SwitzerlandIn order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical parameters (dimensions of the cells) and physical parameters such as the mobility, conductivity, Hall factor, carrier concentration, and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for behavior simulation in circuit environment of CMOS Hall effect devices, with different shapes and technologies assessing their performance, has been elaborated.http://dx.doi.org/10.1155/2013/968647
collection DOAJ
language English
format Article
sources DOAJ
author Maria-Alexandra Paun
Jean-Michel Sallese
Maher Kayal
spellingShingle Maria-Alexandra Paun
Jean-Michel Sallese
Maher Kayal
A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
Advances in Condensed Matter Physics
author_facet Maria-Alexandra Paun
Jean-Michel Sallese
Maher Kayal
author_sort Maria-Alexandra Paun
title A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
title_short A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
title_full A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
title_fullStr A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
title_full_unstemmed A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
title_sort circuit model for cmos hall cells performance evaluation including temperature effects
publisher Hindawi Limited
series Advances in Condensed Matter Physics
issn 1687-8108
1687-8124
publishDate 2013-01-01
description In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical parameters (dimensions of the cells) and physical parameters such as the mobility, conductivity, Hall factor, carrier concentration, and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for behavior simulation in circuit environment of CMOS Hall effect devices, with different shapes and technologies assessing their performance, has been elaborated.
url http://dx.doi.org/10.1155/2013/968647
work_keys_str_mv AT mariaalexandrapaun acircuitmodelforcmoshallcellsperformanceevaluationincludingtemperatureeffects
AT jeanmichelsallese acircuitmodelforcmoshallcellsperformanceevaluationincludingtemperatureeffects
AT maherkayal acircuitmodelforcmoshallcellsperformanceevaluationincludingtemperatureeffects
AT mariaalexandrapaun circuitmodelforcmoshallcellsperformanceevaluationincludingtemperatureeffects
AT jeanmichelsallese circuitmodelforcmoshallcellsperformanceevaluationincludingtemperatureeffects
AT maherkayal circuitmodelforcmoshallcellsperformanceevaluationincludingtemperatureeffects
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