A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2013-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2013/968647 |
| Summary: | In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical parameters (dimensions of the cells) and physical parameters such as the mobility, conductivity, Hall factor, carrier concentration, and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for behavior simulation in circuit environment of CMOS Hall effect devices, with different shapes and technologies assessing their performance, has been elaborated. |
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| ISSN: | 1687-8108 1687-8124 |