RBER Aware Multi-Sensing for Improving Read Performance of 3D MLC NAND Flash Memory

3D-multi-level cell (MLC) NAND flash memory adopts 3D stack technology and stores two bits per cell, leading to improved storage capacities, but sacrificing data reliability. Low-density parity-check (LDPC) codes showing strong error correction capability benefit from their soft decision decoding, w...

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Bibliographic Details
Main Authors: Meng Zhang, Fei Wu, Xubin Chen, Yajuan Du, Weihua Liu, Yahui Zhao, Jiguang Wan, Changsheng Xie
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8478389/

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