Comparison of conventional and cascode drive of SiC BJTs

Comparison of conventional and cascode drive of SiC BJTs

This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when...

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Bibliographic Details
Main Authors:	Neville McNeill, Mark A. H. Broadmeadow, Nina Roscoe, Stephen Finney
Format:	Article
Language:	English
Published:	Wiley 2019-04-01
Series:	The Journal of Engineering
Subjects:	driver circuits silicon compounds wide band gap semiconductors bipolar transistor circuits MOSFET circuits SiC voltage 600.0 V current 2.5 A buck converter bipolar junction transistor cascode variant low-voltage silicon metal-oxide-semiconductor field-effect transistor BJT cascode driver circuits simple conventional driver circuits
Online Access:	https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8034

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