Comparison of conventional and cascode drive of SiC BJTs

Comparison of conventional and cascode drive of SiC BJTs

This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when...

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Bibliographic Details
Main Authors: Neville McNeill, Mark A. H. Broadmeadow, Nina Roscoe, Stephen Finney
Format: Article
Language:English
Published: Wiley 2019-04-01
Series:The Journal of Engineering
Subjects:
driver circuits
silicon compounds
wide band gap semiconductors
bipolar transistor circuits
MOSFET circuits
SiC
voltage 600.0 V
current 2.5 A
buck converter
bipolar junction transistor
cascode variant
low-voltage silicon metal-oxide-semiconductor field-effect transistor
BJT
cascode driver circuits
simple conventional driver circuits
Online Access:https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8034

Internet

https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8034

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